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Sputtered coatings of SiNx:H on H2 plasma etched mono-Si substrate
 Hégr, O. ; Boušek, J. ; Fořt, Tomáš ; Sobota, Jaroslav ; Vavruňková, V. ; Bařinka, R. ; Poruba, A.
The paper deals with cleaning, activation and ability of hydrogenation of monocrystalline silicon surface with the help of plasma etching in H2. Using the input gases Ar/H2 it is possible to initiate silicon surface chemical reactions acting similar to a standard chemical etching. The process is combined with deposition of SiNx:H layers on plasma etched substrate.
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